The steady shrinkage of the semiconductor devices in the last five decades, as predicted by Moore’s law, has changed our daily lives. This progress was possible through advancements in photolithography. Extreme ultraviolet (EUV) lithography at 13.5 nm wavelength is the manufacturing method for high-volume semiconductor manufacturing at 7 nm technology node and below. To enable future progress, many challenges lie ahead. In addition to the optical resolution, other limitations are already emerging, such as photon shot noise, mask 3D effects, and, not the least, resist materials. In this presentation, some of these issues will be addressed, and potential solutions are proposed.
Biography
Yasin Ekinci is the head of the Laboratory for Micro and Nanotechnology (LMN). He obtained his Ph.D. in Max-Planck Institute for Dynamics and Self-Organization, Göttingen, Germany, in 2003. He worked on various topics of nanoscience and technology, including atom optics, surface science, EUV lithography, resist materials, coherent scattering, lensless imaging, plasmonics, metamaterials, biosensing, semiconductor nanostructures, and nanofluidics. He is author/co-author of more than 200 papers, 3 book chapters, and 7 patent applications. He received Young investigator of the year award of Swiss Society for Optics and Microscopy in 2009. He is a fellow of SPIE.
